دورية أكاديمية
Plasma deposition of a –Si, Ge: H, F thin films from SiF 4 –GeH 4 –H 2 mixtures
| العنوان: | Plasma deposition of a –Si, Ge: H, F thin films from SiF 4 –GeH 4 –H 2 mixtures |
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| المؤلفون: | Bruno, G., Capezzuto, P., Cicala, G., Cramarossa, F. |
| المصدر: | Journal of Materials Research ; volume 4, issue 2, page 366-372 ; ISSN 0884-2914 2044-5326 |
| بيانات النشر: | Springer Science and Business Media LLC |
| سنة النشر: | 1989 |
| مصطلحات موضوعية: | Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science |
| الوصف: | The deposition of hydrogenated and fluorinated silicon-germanium alloys (Si 1− x Ge x :H.F) by glow discharge decomposition of silicon tetrafluoride (SiF 4 ) and germane (GeH 4 ) mixtures has been studied. Optical emission spectroscopy (OES), for the analysis of the emitting species in plasma phase, and mass spectroscopy (MS) for the analysis of the stable species, are used for the plasma diagnostics. In addition, in situ measurements of the deposition rate by laser interferometry are performed. A series of alloys with germanium content ranging from 0 to 55% has been prepared by varying the gas compositional ratio. Data on the optical gap ( E c ), sub-gap absorption, and photo-to-dark conductivity ratio (δσ/σ) are used to evaluate the quality of the materials. An alloy a –Si 0.75 Ge 0.25 : H, F having E c δ 1.5 eV and δσ/σ = 10 4 has been prepared by adding 1% of GeH 4 to SiF 4 in the feed. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1557/jmr.1989.0366 |
| الإتاحة: | https://doi.org/10.1557/jmr.1989.0366Test https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0884291400004428Test |
| حقوق: | https://www.cambridge.org/core/termsTest |
| رقم الانضمام: | edsbas.3A01503C |
| قاعدة البيانات: | BASE |
| DOI: | 10.1557/jmr.1989.0366 |
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