دورية أكاديمية

Probing the infrared properties of a p-doped Ge\(_{0.938}\)Sn\(_{0.062}\) thin film via polarization-dependent FTIR spectroscopy

التفاصيل البيبلوغرافية
العنوان: Probing the infrared properties of a p-doped Ge\(_{0.938}\)Sn\(_{0.062}\) thin film via polarization-dependent FTIR spectroscopy
المؤلفون: Carnio, B. N., Shahriar, B., Attiaoui, A., Atalla, M. R. M., Assali, S., Moutanabbir, Oussama, Elezzabi, A. Y.
بيانات النشر: AIP Publishing
سنة النشر: 2024
المجموعة: École Polytechnique de Montréal: PolyPublie
مصطلحات موضوعية: 2500 Génie électrique et électronique, 2523 Fabrication et mise sous enveloppe de semi-conducteurs, 3100 Physique, 3101 Études atomiques et moléculaires
الوصف: The complex relative permittivity of doped Ge₁₋ₓSnₓ thin films (realized using state-of-the-art growth techniques) are obtained by devising a methodology based upon polarization-dependent reflection measurements along with multi-layer Fresnel reflection equations. The developed approach is implemented to acquire the complex relative permittivity of a 170-nm-thick Ge₁₋ₓSnₓ film exhibiting a hole carrier concentration of 3.3 × 10¹⁹ cm⁻³ and x = 6.2%, with this Sn composition suggesting the film is on the cusp of exhibiting a direct bandgap. The investigation conducted on this thin film as well as the developed methodology are expected to further establish Ge₁₋ₓSnₓ as the primary semiconductor for on-chip light emission and sensing devices.
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
العلاقة: Carnio, B. N., Shahriar, B., Attiaoui, A., Atalla, M. R. M., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2024). Probing the infrared properties of a p-doped Ge\(_{0.938}\)Sn\(_{0.062}\) thin film via polarization-dependent FTIR spectroscopy. Applied Physics Letters, 124(7), 072102 (6 pages).
DOI: 10.1063/5.0187087
الإتاحة: https://doi.org/10.1063/5.0187087Test
https://publications.polymtl.ca/57390Test/
رقم الانضمام: edsbas.146C5694
قاعدة البيانات: BASE