دورية أكاديمية
Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode
| العنوان: | Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode |
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| المؤلفون: | Rupp, J.A.J., Janod, E., Besland, M.-P., Corraze, B., Kindsmüller, A., Querre, M., Tranchant, J., Cario, L., Dittmann, R., Waser, R., Wouters, D.J. |
| المساهمون: | Rheinisch-Westfälische Technische Hochschule Aachen (RWTH), JARA-FIT, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Res Ctr Julich GmbH |
| المصدر: | ISSN: 0040-6090 ; Thin Solid Films ; https://hal.archives-ouvertes.fr/hal-02793716Test ; Thin Solid Films, Elsevier, 2020, 705, pp.138063. ⟨10.1016/j.tsf.2020.138063⟩. |
| بيانات النشر: | HAL CCSD Elsevier |
| سنة النشر: | 2020 |
| المجموعة: | Archive ouverte HAL (Hyper Article en Ligne, CCSD - Centre pour la Communication Scientifique Directe) |
| مصطلحات موضوعية: | Vanadium Oxide, Vanadium Sesquioxide, V 2 O 3, Reactive Sputtering, Bixbyite, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] |
| الوصف: | International audience ; This comprehensive work investigates a technologically appealing synthesis of V 2 O 3 oxide thin films for electronic applications by the use of direct reactive sputtering with a heavily diluted gas mixture on a conducting platinum electrode. Morphological characterization was performed by Scanning Electron Microscopy, Atomic Force Microscopy , X-Ray Diffraction and X-Ray Reflectometry. Vanadium valence states were investigated by X-Ray Photoelectron Spectroscopy and crystalline phases were checked by X-Ray Grazing Incidence measurements. Low temperature electrical transport characteristics were determined by 2-point probe measurements. Only amorphous V 2 O 3 was found to exist in a mixed-valence phase in the 2 investigated parameter range. Deposition temperatures between 400 °C and 550 °C enable formation of mixtures between crystallographic phases of corundum-and bixbyite-type V 2 O polymorphs. Depending on temperature and sputtering power, morphology and stoichiometry can be tuned to generate four distinct type of electrical transport characteristics. Most promising electrical properties of corundum V 2 O 3 with a resistance ratio of up to four orders of magnitude (during the low temperature insulator-to-metal transition) have been obtained for a moderate sputtering power of 50 W (on a 1" target) at a deposition temperature of 600 °C. Reactive sputtering thus enables direct control of structural and electrical parameters for polycrystalline V 2 O 3 thin film phases on a conducting substrate. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| العلاقة: | hal-02793716; https://hal.archives-ouvertes.fr/hal-02793716Test; https://hal.archives-ouvertes.fr/hal-02793716/documentTest; https://hal.archives-ouvertes.fr/hal-02793716/file/BESLAND-Thin%20Solid%20Films_2020_705_138063.pdfTest |
| DOI: | 10.1016/j.tsf.2020.138063 |
| الإتاحة: | https://doi.org/10.1016/j.tsf.2020.138063Test https://hal.archives-ouvertes.fr/hal-02793716Test https://hal.archives-ouvertes.fr/hal-02793716/documentTest https://hal.archives-ouvertes.fr/hal-02793716/file/BESLAND-Thin%20Solid%20Films_2020_705_138063.pdfTest |
| حقوق: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.1402D2F4 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.tsf.2020.138063 |
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