تقرير
Formation of Beta-Indium Selenide Layers Grown via Selenium Passivation of InP(111)B Substrate
| العنوان: | Formation of Beta-Indium Selenide Layers Grown via Selenium Passivation of InP(111)B Substrate |
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| المؤلفون: | Wickramasinghe, Kaushini S., Forrester, Candice, McCartney, Martha R., Smith, David J., Tamargo, Maria C. |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics |
| الوصف: | Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. In2Se3 also provides the important advantage of tuning the electrical properties of ultra-thin layers with an external electrical and magnetic field, making it a potential platform to study novel two-dimensional physics. Yet, In2Se3 has many different polymorphs, and it has been challenging to synthesize single-phase material, especially using scalable growth methods, as needed for technological applications. In this paper, we use aberration-corrected scanning transmission electron microscopy to characterize the microstructure of twin-free single-phase ultra-thin layers of beta-In2Se3, prepared by a unique molecular beam epitaxy approach. We emphasize features of the In2Se3 layer and In2Se3/InP interface which provide evidence for understanding the growth mechanism of the single-phase In2Se3. This novel approach for forming high-quality twin-free single phase two-dimensional crystals on InP substrates is likely to be applicable to other technologically important substrates. Comment: 19 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| الوصول الحر: | http://arxiv.org/abs/2405.09371Test |
| رقم الانضمام: | edsarx.2405.09371 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |