Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

التفاصيل البيبلوغرافية
العنوان: Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires
المؤلفون: Qin, Jing-Kai, Liao, Pai-Ying, Si, Mengwei, Gao, Shiyuan, Qiu, Gang, Jian, Jie, Wang, Qingxiao, Zhang, Si-Qi, Huang, Shouyuan, Charnas, Adam, Wang, Yixiu, Kim, Moon J., Wu, Wenzhuo, Xu, Xianfan, Wang, Hai-Yan, Yang, Li, Yap, Yoke Khin, Ye, Peide D.
سنة النشر: 2020
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
الوصف: Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.
Comment: 45 pages, 23 figures. Nature Electronics, to be published
نوع الوثيقة: Working Paper
DOI: 10.1038/s41928-020-0365-4.
الوصول الحر: http://arxiv.org/abs/2001.05539Test
رقم الانضمام: edsarx.2001.05539
قاعدة البيانات: arXiv