Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells

التفاصيل البيبلوغرافية
العنوان: Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells
المؤلفون: Khouri, T., Pezzini, S., Bendias, M., Leubner, P., Zeitler, U., Hussey, N. E., Buhmann, H., Molenkamp, L. W., Titov, M., Wiedmann, S.
المصدر: Phys. Rev. B 99, 075303 (2019)
سنة النشر: 2018
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a monotonically decreasing magnetoresistance is observed when a magnetic field up to order 10 T is applied parallel to the quantum well plane. This feature is accompanied by a vanishing of non-locality and is consistent with a predicted modification of the energy spectrum that becomes gapless at a critical in-plane field $B_{c}$. Magnetic fields in excess of $B_c$ allow us to investigate the evolution of the magnetoresistance in this field-induced semi-metallic region beyond the known regime. After an initial saturation phase in the presumably gapless phase, we observe a strong upturn of the longitudinal resistance. A small residual Hall signal picked up in non-local measurements suggests that this feature is likely a bulk phenomenon and caused by the semi-metallicity of the sample. Theoretical calculations indeed support that the origin of these features is classical and a power law upturn of the resistance can be expected due to the specifics of two-carrier transport in thin (semi-)metallic samples subjected to large magnetic fields.
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevB.99.075303
الوصول الحر: http://arxiv.org/abs/1808.02268Test
رقم الانضمام: edsarx.1808.02268
قاعدة البيانات: arXiv