تقرير
Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
| العنوان: | Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy |
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| المؤلفون: | Xu, J. F., Liu, S. W., Xiao, M., Thibado, P. M. |
| المصدر: | Journal of Crystal Growth 301-302, 101-104 (2007) |
| سنة النشر: | 2015 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the samples grown at a low substrate temperature are greater than those in the samples grown at a high substrate temperature. The PL spectra show a GaAs exciton peak, a peak involving a carbon acceptor, a substitutional Mn acceptor-related peak and an optical phonon-related peak. Comment: 7 pages, 3 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1016/j.jcrysgro.2006.11.049 |
| الوصول الحر: | http://arxiv.org/abs/1503.02686Test |
| رقم الانضمام: | edsarx.1503.02686 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1016/j.jcrysgro.2006.11.049 |
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