Effects of chemical pressure on the Fermi surface and band dispersion in the electron-doped high-Tc superconductors

التفاصيل البيبلوغرافية
العنوان: Effects of chemical pressure on the Fermi surface and band dispersion in the electron-doped high-Tc superconductors
المؤلفون: Ikeda, M., Yoshida, T., Fujimori, A., Kubota, M., Ono, K., Das, Hena, Saha-Dasgupta, T., Unozawa, K., Kaga, Y., Sasagawa, T., Takagi, H.
المصدر: Phys. Rev. B 80, 014510 (2009)
سنة النشر: 2008
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Superconductivity
الوصف: We have performed angle-resolved photoemission spectroscopy (ARPES) measurements and first-principles electronic structure calculations on the electron-doped high-Tc superconductors Ln1.85Ce0.15CuO4 (Ln = Nd, Sm, and Eu). The observed Fermi surface and band dispersion show such changes that with decreasing ionic size of Ln3+, the curvature of the Fermi surface or -t'/t decreases, where t and t' are transfer integrals between the nearest-neighbor and next-nearestneighbor Cu sites, respectively. The increase of t with chemical pressure is found to be significant, which may explain the apparently inconsistent behavior seen in the hole-doped La2-xSrxCuO4 under epitaxial strain [M. Abrecht et al., Phys. Rev. Lett. 91, 057002 (2003)]. A gap due to the antiferromagnetism opens even in the nodal region for the Sm and Eu compounds, and the gap size increases in going from Ln = Sm to Eu.
Comment: 4 pages, 4 figures
نوع الوثيقة: Working Paper
الوصول الحر: http://arxiv.org/abs/0803.4059Test
رقم الانضمام: edsarx.0803.4059
قاعدة البيانات: arXiv