Germanium Based Field-Effect Transistors: Challenges and Opportunities
| العنوان: | Germanium Based Field-Effect Transistors: Challenges and Opportunities |
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| المؤلفون: | Patrick S. Goley, Mantu K. Hudait |
| المصدر: | Materials Materials, Vol 7, Iss 3, Pp 2301-2339 (2014) |
| بيانات النشر: | MDPI, 2014. |
| سنة النشر: | 2014 |
| مصطلحات موضوعية: | Electron mobility, Materials science, gate stack, quantum well, chemistry.chemical_element, Nanotechnology, Germanium, 02 engineering and technology, Review, lcsh:Technology, 7. Clean energy, 01 natural sciences, law.invention, PMOS logic, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Microelectronics, General Materials Science, passivation, lcsh:Microscopy, Quantum well, lcsh:QC120-168.85, 010302 applied physics, lcsh:QH201-278.5, lcsh:T, business.industry, Transistor, high mobility, Strained silicon, 021001 nanoscience & nanotechnology, Engineering physics, germanium, chemistry, lcsh:TA1-2040, lcsh:Descriptive and experimental mechanics, Field-effect transistor, lcsh:Electrical engineering. Electronics. Nuclear engineering, buffer, lcsh:Engineering (General). Civil engineering (General), 0210 nano-technology, business, lcsh:TK1-9971, heterogeneous integration |
| الوصف: | The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. |
| اللغة: | English |
| تدمد: | 1996-1944 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f947453a088124d1fd57753acf7b19fdTest http://europepmc.org/articles/PMC5453288Test |
| حقوق: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....f947453a088124d1fd57753acf7b19fd |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19961944 |
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