التفاصيل البيبلوغرافية
العنوان:
Study of silicon photomultiplier performance in external electric fields
المؤلفون:
A. Alamre , T. Stiegler , John L. Orrell , T. Daniels , M. Côté , J. Schneider , Z. Li , N. Roy , L. Cao , F. Nolet , M. Oriunno , M. Hughes , Ethan Brown , J. Farine , D. Fairbank , D. Qiu , Y. Ito , M. Coon , Thilo Michel , Qing Xia , V.N. Stekhanov , C. T. Overman , M. Chiu , G. S. Ortega , A. Karelin , A. Pocar , D. S. Leonard , T. Tolba , Venkatesh Veeraraghavan , J. Hößl , Marc Weber , S. Kravitz , Yuehe Lin , David Moore , Y. Lan , R. DeVoe , Serge A. Charlebois , K. Murray , A. Craycraft , J. Echevers , Gisela Anton , M. Wagenpfeil , J. Dalmasson , T. Brunner , E. Raguzin , O. Nusair , Jens Dilling , R. Krücken , Z. Ning , Samuele Sangiorgio , Wei Wei , K. S. Kumar , S. X. Wu , Gerard Visser , P. S. Barbeau , D. A. Harris , A. Der Mesrobian-Kabakian , J. B. Zhao , A. Larson , D. Fudenberg , O. Zeldovich , A. Piepke , I. Badhrees , Angelo Dragone , M. J. Jewell , F. Vachon , Rejean Fontaine , Jean-Francois Pratte , R. Saldanha , L. Darroch , D. Kodroff , B. Veenstra , F. Bourque , S. Parent , S. Rescia , Lorenzo Fabris , T. Bhatta , A. Odian , S. J. Daugherty , J. Watkins , I. Ostrovskiy , R. MacLellan , G. Giacomini , J. P. Brodsky , T. I. Totev , Stefan Schmidt , R. Tsang , O. Njoya , A. Iverson , Triveni Rao , K. Skarpaas Viii , T. Rossignol , G. Wrede , B. Mong , Thomas Tsang , Shu Li , P. Fierlinger , W. R. Cen , Liangjian Wen , Guofu Cao , L. J. Kaufman , A. E. Robinson , M. Tarka , J. B. Albert , Qian Wang , G. Li , S. Feyzbakhsh , Giorgio Gratta , Yumei Zhou , M. J. Dolinski , P. Hufschmidt , David A. Sinclair , B. T. Cleveland , K. Odgers , A. Kuchenkov , U. Wichoski , G. St-Hilaire , C. Licciardi , V. Radeka , T. Ziegler , Thomas Koffas , W. M. Fairbank , Xilei Sun , I. J. Arnquist , Wei Wu , R.J. Newby , P. C. Rowson , A. House , W. Cree , S. Delaquis , Xiaoshan Jiang , C. Chambers , G. Gallina , P. Lv , J. Todd , Y. Y. Ding , E. V. Hansen , Liang Yang , A. Jamil , Douglas H Beck , A. Burenkov , Y-R Yen , J. L. Vuilleumier , Arun Kumar Soma , C. Jessiman , M. K. Moe , Eric W. Hoppe , M. Heffner , J. Daughhetee , R. Gornea , F. Retière , V. A. Belov
المصدر:
Journal of Instrumentation . 13:T09006-T09006
بيانات النشر:
IOP Publishing, 2018.
سنة النشر:
2018
مصطلحات موضوعية:
010302 applied physics , Physics - Instrumentation and Detectors , Materials science , 010308 nuclear & particles physics , business.industry , FOS: Physical sciences , Observable , Instrumentation and Detectors (physics.ins-det) , 01 natural sciences , 7. Clean energy , Silicon photomultiplier , Electric field , 0103 physical sciences , Optoelectronics , business , Instrumentation , Photon detection , Mathematical Physics
الوصف:
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No observable physical damage to the bulk or surface of the devices was caused by the exposure.
تدمد:
1748-0221
الوصول الحر:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7b11245d3f28c79a5af798b7124ab6aTest https://doi.org/10.1088/1748-0221/13/09/t09006Test
حقوق:
OPEN
رقم الانضمام:
edsair.doi.dedup.....c7b11245d3f28c79a5af798b7124ab6a
قاعدة البيانات:
OpenAIRE
