Optimization and improvement of TIPS-pentacene transistors (OTFT) with UV-ozone and chemical treatments using an all-step solution process
العنوان: | Optimization and improvement of TIPS-pentacene transistors (OTFT) with UV-ozone and chemical treatments using an all-step solution process |
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المؤلفون: | Younsu Jung, Ji-Youp Kim, Tomi Hassinen, Sung-Lim Ko, Byoungjoon Ahn, Jaemin Kim |
المصدر: | Kim, J, Kim, J, Ahn, B, Hassinen, T, Jung, Y & Ko, S 2015, ' Optimization and improvement of TIPS-pentacene transistors (OTFT) with UV-ozone and chemical treatments using an all-step solution process ', Current Applied Physics, vol. 15, no. 10, pp. 1238-1244 . https://doi.org/10.1016/j.cap.2015.07.012Test |
بيانات النشر: | Elsevier, 2015. |
سنة النشر: | 2015 |
مصطلحات موضوعية: | Materials science, Silicon, Organic thin film transistor, General Physics and Astronomy, chemistry.chemical_element, engineering.material, All-solution-based, Roll-to-roll processing, Pentacene, chemistry.chemical_compound, Coating, TIPS-Pentacene, Monolayer, Roll-to-roll, General Materials Science, ta216, Solution process, ta114, business.industry, Gravure printing, Semiconductor, chemistry, engineering, Optoelectronics, business, Layer (electronics) |
الوصف: | We fabricated an organic thin-film transistor (OTFT) using an all-step solution process. The printed layers, in which the electrode (silver), dielectric layer (BaTiO3–PMMA), source–drain layer, and semiconductor 6,13-Bis(triisopropylsilylethynyl)pentacene(TIPS–pentacene), were optimized using roll-to-roll, an inkjet printer, and drop-casting. After coating the source–drain layer, we applied ultraviolet (UV)–ozone and self-assembled monolayer (SAM) treatments to the composite layer. The OTFTs treated with the UV–ozone and SAM treatments were found to exhibit excellent performance and good properties in comparison to silicon-based OTFTs. |
اللغة: | English |
تدمد: | 1878-1675 1567-1739 |
الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a21b32177bdda1df00e131f8a5708650Test https://doi.org/10.1016/j.cap.2015.07.012Test |
حقوق: | CLOSED |
رقم الانضمام: | edsair.doi.dedup.....a21b32177bdda1df00e131f8a5708650 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 18781675 15671739 |
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