Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide
| العنوان: | Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide |
|---|---|
| المؤلفون: | Jin-Shi Xu, Jun-Feng Wang, Xiu-Xia Wang, Chuan-Feng Li, Fei-Fei Yan, Weiping Zhang, Liping Guo, Wei Huang, Xiong Zhou, Qiang Li, Ze-Di Cheng, Zheng-Hao Liu, Guang-Can Guo, Zhou Kun |
| المصدر: | Nanoscale. 11:20554-20561 |
| بيانات النشر: | Royal Society of Chemistry (RSC), 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, Photoluminescence, Plasma etching, Silicon, business.industry, technology, industry, and agriculture, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, chemistry.chemical_compound, Ion implantation, chemistry, Etching (microfabrication), Vacancy defect, Silicon carbide, Optoelectronics, General Materials Science, Reactive-ion etching, 0210 nano-technology, business |
| الوصف: | Color centers in silicon carbide have recently attracted broad interest as high bright single photon sources and defect spins with long coherence time at room temperature. There have been several methods to generate silicon vacancy defects with excellent spin properties in silicon carbide, such as electron irradiation and ion implantation. However, little is known about the depth distribution and nanoscale depth control of the shallow defects. Here, a method is presented to precisely control the depths of the ion implantation induced shallow silicon vacancy defects in silicon carbide by using reactive ion etching with little surface damage. After optimizing the major etching parameters, a slow and stable etching rate of about 5.5 ± 0.5 nm min-1 can be obtained. By successive nanoscale plasma etching, the shallow defects are brought close to the surface step by step. The photoluminescence spectrum and optically detected magnetic resonance spectra are measured, which confirm that there were no plasma-induced optical and spin property changes of the defects. By tracing the mean counts of the remaining defects after each etching process, the depth distribution of the defects can be obtained for various implantation conditions. Moreover, the spin coherence time T2* of the generated VSi defects is detected at different etch depths, which greatly decreases when the depth is less than 25 nm. The method of nanoscale depth control of silicon vacancies would pave the way for investigating the surface spin properties and the applications in nanoscale sensing and quantum photonics. |
| تدمد: | 2040-3372 2040-3364 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d22405ca451f3b7fdf05a17d4229179Test https://doi.org/10.1039/c9nr05938eTest |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi.dedup.....2d22405ca451f3b7fdf05a17d4229179 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20403372 20403364 |
|---|