Self-limiting Sb monolayer as a diffusion source for Ge doping
| العنوان: | Self-limiting Sb monolayer as a diffusion source for Ge doping |
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| المؤلفون: | Gian Andrea Rizzi, Gianluigi Maggioni, Sara Carturan, D. De Salvador, Igor Píš, Walter Raniero, Federica Bondino, Chiara Carraro, Enrico Napolitani, Francesco Sgarbossa |
| المصدر: | Applied surface science 496 (2019). doi:10.1016/j.apsusc.2019.143713 info:cnr-pdr/source/autori:Sgarbossa F.; Maggioni G.; Rizzi G.A.; Carturan S.M.; Napolitani E.; Raniero W.; Carraro C.; Bondino F.; Pis I.; De Salvador D./titolo:Self-limiting Sb monolayer as a diffusion source for Ge doping/doi:10.1016%2Fj.apsusc.2019.143713/rivista:Applied surface science/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:496 |
| بيانات النشر: | Elsevier BV, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Antimony, Materials science, Monolayer, Antimony, Germanium, Doping, Surface chemistry, Oxide, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Germanium, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, chemistry.chemical_compound, X-ray photoelectron spectroscopy, Monolayer, Doping, Diffusion (business), Dopant, Surfaces and Interfaces, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surface chemistry, 0104 chemical sciences, Surfaces, Coatings and Films, chemistry, 0210 nano-technology |
| الوصف: | A new method for the creation of high-quality, fully electrically active junctions to be applied in nanostructured semiconductor materials is explored in this work. The method consists in a gas phase antimony deposition on Ge, which gives rise to an antimony self-limiting behavior to form a monolayer (ML) on the Ge (100) surface. The ML formation is characterized by a wide thermal process window in terms of time and temperature. Synchrotron radiation Angle Resolved X-ray Photoelectron Spectroscopy shows that the ML structure consists in oxidized Sb grown over a very thin layer of Ge oxide, and a small amount of metallic Sb is embedded beneath the Ge surface during the deposition process. Interestingly, during the ML formation process native Ge oxide is reduced without the need of strong acid pre-treatments. By performing further thermal annealing in equilibrium conditions, Sb diffusion can be faithfully described by a well assessed diffusion model. Finally, processing the Sb monolayer with Pulsed Laser Melting technique, which is a strongly out-equilibrium diffusion process, allows to exploit the entire Sb ML as a dopant source, thus achieving junctions with a very high dopant concentration (1.2 × 1020 cm−3 Sb surface concentration) and a 100% Sb electrical activation. |
| تدمد: | 0169-4332 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c1626e9d5a4b78d62bc09c42aa5f836Test https://doi.org/10.1016/j.apsusc.2019.143713Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi.dedup.....0c1626e9d5a4b78d62bc09c42aa5f836 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 01694332 |
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