التفاصيل البيبلوغرافية
العنوان:
Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory
المؤلفون:
Hai Huang , Xiaoming Yuan , Xiaomei Yao , Weida Hu , Xutao Zhang , Chen Zhou , Zhou Tang , Jin Zou , Dongdong Wei , Lan Fu , Wei Lu , Ziyuan Li , Pingping Chen
المصدر:
ACS Applied Electronic Materials . 1:1825-1831
بيانات النشر:
American Chemical Society (ACS), 2019.
سنة النشر:
2019
مصطلحات موضوعية:
Materials science , business.industry , Transistor , Nanowire , equipment and supplies , Electronic, Optical and Magnetic Materials , law.invention , Non-volatile memory , law , Materials Chemistry , Electrochemistry , Light induced , Optoelectronics , Field-effect transistor , business
الوصف:
Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect stat...
تدمد:
2637-6113
الوصول الحر:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4432d3d80ae33035dde00cd41c4d75bTest https://doi.org/10.1021/acsaelm.9b00368Test
حقوق:
CLOSED
رقم الانضمام:
edsair.doi...........c4432d3d80ae33035dde00cd41c4d75b
قاعدة البيانات:
OpenAIRE
