Resistance fluctuations in hydrogenated amorphous silicon: Nonthermal equilibrium
| العنوان: | Resistance fluctuations in hydrogenated amorphous silicon: Nonthermal equilibrium |
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| المؤلفون: | Jaap I. Dijkhuis, Paul A. W. E. Verleg |
| المصدر: | Physical Review B. 58:3917-3923 |
| بيانات النشر: | American Physical Society (APS), 1998. |
| سنة النشر: | 1998 |
| مصطلحات موضوعية: | Thermal equilibrium, Amorphous silicon, Materials science, Condensed matter physics, business.industry, Photoconductivity, Thermal fluctuations, Noise (electronics), chemistry.chemical_compound, Band bending, Semiconductor, chemistry, Metastability, Atomic physics, business |
| الوصف: | fluctuations and number fluctuations due to generation and recombination of free carriers. A model for generation-recombination noise in a semiconductor with localized electronic states distributed throughout the mobility gap appears consistent with both the variance of the fluctuations and the temperature dependence of the rate constants. We identify the activation energy and attempt rate as the barrier limiting thermal emission of holes from defect states to the valence band. The width of the distribution of activation energies points to inhomogeneous broadening due to band bending. Light-induced metastable changes in the material are observed to affect the variance quite significantly. The present measurements and analysis of the noise under equilibrium conditions pave the way to successfully examine nonthermal equilibrium fluctuations in the photoconductivity and under injection conditions, which is the subject of the accompanying paper in this volume. @S0163-1829~98!07031-3# |
| تدمد: | 1095-3795 0163-1829 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::6a383bd652a9a36f31416e78df140f96Test https://doi.org/10.1103/physrevb.58.3917Test |
| حقوق: | OPEN |
| رقم الانضمام: | edsair.doi...........6a383bd652a9a36f31416e78df140f96 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10953795 01631829 |
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