Total Ionization Dose Effects on Charge-Trapping Memory With Al2O3/HfO2/Al2O3Trilayer Structure
| العنوان: | Total Ionization Dose Effects on Charge-Trapping Memory With Al2O3/HfO2/Al2O3Trilayer Structure |
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| المؤلفون: | Haibin Wang, Moting Liu, Yefeng Xu, Jinhong Bi, L. Chen, Gang Xu |
| المصدر: | IEEE Transactions on Nuclear Science. 65:200-205 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Nuclear and High Energy Physics, Materials science, 010308 nuclear & particles physics, Analytical chemistry, Charge (physics), Trapping, Electron, 01 natural sciences, law.invention, Non-volatile memory, Capacitor, Nuclear Energy and Engineering, law, Ionization, 0103 physical sciences, Irradiation, Electrical and Electronic Engineering, Electronic band structure |
| الوصف: | This paper investigates total ionization dose (TID) effects on the electrical characteristics of Al2O3-/HfO2-/Al2O3-based charge trapping memory (CTM) devices by 10-keV X-ray. The Al2O3 layers serve as tunnel and blocking oxides, respectively, while HfO2 layer acts as charge-trapping layer. The C–V curves in pristine state shifted toward negative direction, but dc memory window almost kept the same after irradiation. Storage electrons decreased significantly with accumulated dose and reached approximately the same final value regardless of initial values. The impact of TID irradiation on program and erase conditions is also investigated. The program ability still worked well, but the erase ability disappeared gradually after irradiation. The physical mechanisms triggered by TID irradiation on Al2O3-/HfO2-/Al2O3-based CTM structure are discussed in detail with energy band diagrams. |
| تدمد: | 1558-1578 0018-9499 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::69af0276df18f83787bc8b3ed759adcdTest https://doi.org/10.1109/tns.2017.2782215Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........69af0276df18f83787bc8b3ed759adcd |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15581578 00189499 |
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