Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices
| العنوان: | Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices |
|---|---|
| المؤلفون: | Kexin Deng, Xinhua Wang, Sen Huang, Pengfei Li, Qimeng Jiang, Haibo Yin, Jie Fan, Ke Wei, Yingkui Zheng, Jingyuan Shi, Xinyu Liu |
| المصدر: | ACS Applied Materials & Interfaces. 15:25058-25065 |
| بيانات النشر: | American Chemical Society (ACS), 2023. |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | General Materials Science |
| تدمد: | 1944-8252 1944-8244 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::476acb07421b7134f25e0f977dbe578dTest https://doi.org/10.1021/acsami.3c03094Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........476acb07421b7134f25e0f977dbe578d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19448252 19448244 |
|---|