Silicon near‐surface disorder and etch residues caused by CCIF3/H2reactive ion etching
| العنوان: | Silicon near‐surface disorder and etch residues caused by CCIF3/H2reactive ion etching |
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| المؤلفون: | S. N. Chakravarti, Gottlieb S. Oehrlein, Young H. Lee, C. M. Ransom |
| المصدر: | Applied Physics Letters. 46:686-688 |
| بيانات النشر: | AIP Publishing, 1985. |
| سنة النشر: | 1985 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), chemistry, Silicon, Scattering, Etching (microfabrication), Fluorine, Analytical chemistry, chemistry.chemical_element, Reactive-ion etching, Oxygen, Layer (electronics), Ion |
| الوصف: | The effects of SiO2 reactive ion etching (RIE) in CClF3/H2 on the surface properties of the underlying Si substrate have been studied by photoemission and He ion scattering/channeling techniques. We find that RIE introduces a F, C, and Cl containing layer on the Si surface. Furthermore, displacement damage is introduced in the Si near‐surface region during RIE processing. The efficacy of O2 plasma or rapid thermal annealing RIE post‐treatments for removal of contamination and/or displacement damage has been investigated. |
| تدمد: | 1077-3118 0003-6951 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::45b96efbfa6cfc3b15affed1af2a63f3Test https://doi.org/10.1063/1.95530Test |
| رقم الانضمام: | edsair.doi...........45b96efbfa6cfc3b15affed1af2a63f3 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10773118 00036951 |
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