The over-saturation phenomenon of a Hg0.46Cd0.54Te photovoltaic detector irradiated by a CW laser

التفاصيل البيبلوغرافية
العنوان: The over-saturation phenomenon of a Hg0.46Cd0.54Te photovoltaic detector irradiated by a CW laser
المؤلفون: Qi-Sheng Lu, Tian Jiang, Xin Zheng, Hou-Man Jiang, Xiang-Ai Cheng
المصدر: Semiconductor Science and Technology. 26:115004
بيانات النشر: IOP Publishing, 2011.
سنة النشر: 2011
مصطلحات موضوعية: Materials science, Band gap, business.industry, Detector, Photon energy, Condensed Matter Physics, Laser, Electronic, Optical and Magnetic Materials, law.invention, Optics, law, Thermoelectric effect, Materials Chemistry, Optoelectronics, Irradiation, Laser power scaling, Electrical and Electronic Engineering, business, Saturation (magnetic)
الوصف: A Hg0.46Cd0.54Te (~0.91 eV bandgap) photovoltaic detector is exposed to 10.6 ?m and 1319 nm intense laser radiations. The open-circle voltage (Voc) of the detector is measured and found to decrease with laser power density above the saturation threshold. The characteristics of over-saturation phenomena are quite sensitive to the temperature. For the Hg0.46Cd0.54Te detector, the photon energy of a 10.6 ?m laser (sub-bandgap laser) is less than the bandgap, and the photon energy of a 1319 nm laser (above-bandgap laser) is above the bandgap. Both lasers can induce an over-saturation phenomenon, but the dominant mechanism is different. The results indicate that photovoltage and thermoelectric voltage are the dominant mechanisms for above-bandgap illumination, and thermovoltage and thermoelectric voltage are the dominant mechanisms for sub-bandgap illumination.
تدمد: 1361-6641
0268-1242
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::3e98e853a5b35f50373331f7d8493d63Test
https://doi.org/10.1088/0268-1242/26/11/115004Test
رقم الانضمام: edsair.doi...........3e98e853a5b35f50373331f7d8493d63
قاعدة البيانات: OpenAIRE