التفاصيل البيبلوغرافية
| العنوان: |
Diffusion of Hydrogenin Semiconductors, and its Association with Defects and Impurities |
| المؤلفون: |
C. R. Abernathy, Fan Ren, Stephen J. Pearton |
| المصدر: |
Defect and Diffusion Forum. :1-42 |
| بيانات النشر: |
Trans Tech Publications, Ltd., 2007. |
| سنة النشر: |
2007 |
| مصطلحات موضوعية: |
Radiation, Silicon, Passivation, Chemistry, business.industry, Inorganic chemistry, chemistry.chemical_element, Trapping, Condensed Matter Physics, Charge-carrier density, Semiconductor, Impurity diffusion, Chemical physics, Impurity, General Materials Science, Diffusion (business), business |
| تدمد: |
1662-9507 |
| الوصول الحر: |
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca9f380bde7f8aef7f4c63d7192aeb5Test
https://doi.org/10.4028/www.scientific.net/ddf.111-112.1Test |
| حقوق: |
CLOSED |
| رقم الانضمام: |
edsair.doi...........1ca9f380bde7f8aef7f4c63d7192aeb5 |
| قاعدة البيانات: |
OpenAIRE |
