Proposing a Duty Cycle Based Repetitive Drain Overvoltage Specification for GaN HEMTs

التفاصيل البيبلوغرافية
العنوان:	Proposing a Duty Cycle Based Repetitive Drain Overvoltage Specification for GaN HEMTs
المؤلفون:	Zhang, Shengke, Espinoza, Angel E., Garcia, Ricardo, Arribas, Alejandro Pozo, Strittmatter, Robert
المصدر:	IEEE Power Electronics Magazine; 2024, Vol. 11 Issue: 1 p55-61, 7p
مستخلص:	Transient voltage overshoot is a common phenomenon in wide bandgap (WBG) power semiconductors due to high frequency and fast switching applications. An application driven repetitive transient off-state overvoltage datasheet specification is desired for design engineers. In this work, a 1% duty-cycle-based overvoltage specification is proposed by estimating the total lifetime before the dynamic $\mathrm{R}_{\mathrm{DS}(\text { on) }}$ shift exceeds 20% increase to its initial value under 120% of $\mathrm{V}_{\mathrm{DS}, \text { Max }}$ continuous bias and ${75}^{\circ} \mathrm{C}$ junction temperature. This 1% duty cycle suggests that GaN devices can withstand a 1% duration of each switching period repetitively over 25 years of continuous switching.
قاعدة البيانات:	Supplemental Index

الوصف
تدمد:	23299207 23299215
DOI:	10.1109/MPEL.2024.3354648