التفاصيل البيبلوغرافية
| العنوان: |
High-Performance CH3NH3PbI3-Inverted Planar Perovskite Solar Cells with Fill Factor Over 83% via Excess Organic/Inorganic Halide |
| المؤلفون: |
Jahandar, Muhammad, Khan, Nasir, Lee, Hang Ken, Lee, Sang Kyu, Shin, Won Suk, Lee, Jong-Cheol, Song, Chang Eun, Moon, Sang-Jin |
| المصدر: |
ACS Applied Materials & Interfaces; September 2017, Vol. 9 Issue: 41 p35871-35879, 9p |
| مستخلص: |
The reduction of charge carrier recombination and intrinsic defect density in organic–inorganic halide perovskite absorber materials is a prerequisite to achieving high-performance perovskite solar cells with good efficiency and stability. Here, we fabricated inverted planar perovskite solar cells by incorporation of a small amount of excess organic/inorganic halide (methylammonium iodide (CH3NH3I; MAI), formamidinium iodide (CH(NH2)2I; FAI), and cesium iodide (CsI)) in CH3NH3PbI3perovskite film. Larger crystalline grains and enhanced crystallinity in CH3NH3PbI3perovskite films with excess organic/inorganic halide reduce the charge carrier recombination and defect density, leading to enhanced device efficiency (MAI+: 14.49 ± 0.30%, FAI+: 16.22 ± 0.38% and CsI+: 17.52 ± 0.56%) compared to the efficiency of a control MAPbI3device (MAI: 12.63 ± 0.64%) and device stability. Especially, the incorporation of a small amount of excess CsI in MAPbI3perovskite film leads to a highly reproducible fill factor of over 83%, increased open-circuit voltage (from 0.946 to 1.042 V), and short-circuit current density (from 18.43 to 20.89 mA/cm2). |
| قاعدة البيانات: |
Supplemental Index |
