التفاصيل البيبلوغرافية
| العنوان: |
Inhibition Effect of CTAB on Electrodeposition of Cu in Micro Via: Experimental and MD Simulation Investigations. |
| المؤلفون: |
Houya Wu, Zhiyi Li, Yan Wang, Xiang Li, Wenhui Zhu |
| المصدر: |
Journal of The Electrochemical Society; 2019, Vol. 166 Issue 15, pD816-D825, 10p |
| مصطلحات موضوعية: |
CETYLTRIMETHYLAMMONIUM bromide, ELECTROCHEMICAL analysis, SURFACE charges, INTEGRATED circuits, INHIBITION (Chemistry), ELECTROPLATING |
| مستخلص: |
The integrated circuits (IC) device keep diminishing in size, resulting in that the stacking type of packaging technologies gains increasing attention in the IC device manufacturing industry. By providing vertical interconnection paths for the chips, the through silicon via (TSV) is the key interconnection structure in the stacking packaging. In the fabricating process of TSV, non-defect filling of the micro via is difficult to achieve. Adding additives in the electrolyte is a common way to eliminate defects from the micro via. In this study, a singular additive, namely Cetyltrimethyl Ammonium Bromide (CTAB), is added in the electrolyte to achieve non-defect filling of the micro via. Through electrochemical analysis, it is found that the CTAB shows a significant inhibition effect on the electrodeposition rate. The adsorption behavior of the additive is investigated by MD method. The simulation results indicate that the adsorption behavior of the CTAB to the cathode is related to the surface charge of the cathode. In addition, a competitive adsorption is observed between the CTAB and the Cu2+ ions on the charged surface of the cathode. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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