دورية أكاديمية
Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion...
| العنوان: | Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion... |
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| المؤلفون: | Jacob, M., Pichler, P. |
| المصدر: | Journal of Applied Physics; 7/1/1997, Vol. 82 Issue 1, p182, 10p, 1 Chart, 12 Graphs |
| مصطلحات موضوعية: | PLATINUM, SILICON |
| مستخلص: | Focuses on diffusion of platinum at low temperatures as a way to characterize vacancy profiles in silicon. Summary of experiments performed to find a standard procedure; Limitations of the method; Backside contamination with platinum after one-sided deposition; Drive-in diffusions; Depth profiles of substitutional platinum; FZ silicon; CZ silicon. |
| قاعدة البيانات: | Complementary Index |
| تدمد: | 00218979 |
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| DOI: | 10.1063/1.365796 |