دورية أكاديمية

Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials.

التفاصيل البيبلوغرافية
العنوان: Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials.
المؤلفون: El-Hinnawy, Nabil, Borodulin, Pavel, Wagner, Brian P., King, Matthew R., Jones, Evan B., Howell, Robert S., Lee, Michael J., Young, Robert M.
المصدر: Applied Physics Letters; 7/7/2014, Vol. 105 Issue 1, p1-5, 5p, 1 Color Photograph, 3 Graphs
مصطلحات موضوعية: MICROWAVE switches, CHALCOGENIDES, PHASE change materials, GERMANIUM telluride, THERMOPHYSICAL properties
مستخلص: A high performance RF (radio-frequency) switch based on the phase change effect in germaniumtelluride (GeTe) is described. Thermal pulses applied to a separate independent thin film heating element for 0.1-1.5 μs toggles the switch in a latching fashion. Being non-volatile, no power is required to hold the switch in the on- or off-state. State-of-the-art solid-state RF switches currently in use have an on-state loss of 1 dB; here, we demonstrate an inline phase change switch with a low on-state resistance showing over a frequency range of 0-40 GHz an insertion loss of just 0.1-0.24 dB. [ABSTRACT FROM AUTHOR]
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قاعدة البيانات: Complementary Index
الوصف
تدمد:00036951
DOI:10.1063/1.4885388