التفاصيل البيبلوغرافية
| العنوان: |
Mobility enhancement in strained Si modulation-doped structures by chemical mechanical polishing. |
| المؤلفون: |
Sawano, K., Koh, S., Shiraki, Y., Hirose, Y., Hattori, T., Nakagawa, K. |
| المصدر: |
Applied Physics Letters; 1/20/2003, Vol. 82 Issue 3, p412, 3p, 3 Graphs |
| مصطلحات موضوعية: |
SEMICONDUCTOR doping, SILICON |
| مستخلص: |
The strained Si modulation-doped (MOD) structure formed on the strain-relaxed SiGe buffer layer planarized by chemical mechanical polishing (CMP) was found to show significant mobility enhancement. The enhancement reaches a factor of 6 at low temperatures. The backgate dependence as well as temperature dependence of the transport properties of the MOD structure were investigated, and it was suggested that CMP drastically reduced the roughness scattering and increased the mobility of two-dimensional electron gas in the strained Si. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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