مؤتمر
Properties of in Situ Doped Amorphous and Polycrystalline Silicon Deposited by Chemical Vapor Deposition from Tertiarybutylarsine and Tertiarybutylphosph INE.
العنوان: | Properties of in Situ Doped Amorphous and Polycrystalline Silicon Deposited by Chemical Vapor Deposition from Tertiarybutylarsine and Tertiarybutylphosph INE. |
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المؤلفون: | Kotccki, David E., Blouse, Jeffrey L., Parks, Christopher C., Sarkozy, Robcrt F. |
المصدر: | MRS Online Proceedings Library; 01/25/1990, Vol. 204, pN.PAG-1, 1p |
قاعدة البيانات: | Complementary Index |
تدمد: | 19464274 |
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DOI: | 10.1557/PROC-204-295 |