Properties of in Situ Doped Amorphous and Polycrystalline Silicon Deposited by Chemical Vapor Deposition from Tertiarybutylarsine and Tertiarybutylphosph INE.

التفاصيل البيبلوغرافية
العنوان: Properties of in Situ Doped Amorphous and Polycrystalline Silicon Deposited by Chemical Vapor Deposition from Tertiarybutylarsine and Tertiarybutylphosph INE.
المؤلفون: Kotccki, David E., Blouse, Jeffrey L., Parks, Christopher C., Sarkozy, Robcrt F.
المصدر: MRS Online Proceedings Library; 01/25/1990, Vol. 204, pN.PAG-1, 1p
قاعدة البيانات: Complementary Index
الوصف
تدمد:19464274
DOI:10.1557/PROC-204-295