التفاصيل البيبلوغرافية
| العنوان: |
Channeling in low energy boron ion implantation. |
| المؤلفون: |
Michel, A. E., Kastl, R. H., Mader, S. R., Masters, B. J., Gardner, J. A. |
| المصدر: |
Applied Physics Letters; 1984, Vol. 44 Issue 4, p404-406, 3p |
| مصطلحات موضوعية: |
ION implantation, BORON, CHANNELING (Physics), EFFECT of radiation on solids, SILICON, ION bombardment |
| مستخلص: |
The effects of both planar and axial channeling on the profile of 5-keV boron ions implanted into (100) oriented silicon wafers are demonstrated. A tilt angle of 12° from the (100) axis in a ''random'' crystallographic direction is required to minimize the (100) axial channeling tail. It is also shown that the effect of channeling along 100 planar channels produces a negligible addition to the channeling tail, whereas channeling along the (110) planar channels produces a measurable contribution. Implantation through a thin, 8-nm, thermally grown silicon dioxide layer with the ion beam aligned along the (100) direction produces an ion profile comparable to an offset of 9° in a random direction. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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