التفاصيل البيبلوغرافية
| العنوان: |
Ultrahigh room-temperature hole Hall and effective mobility in Si[sub 0.3]Ge[sub 0.7]/Ge/Si[sub 0.3]Ge[sub 0.7] heterostructures. |
| المؤلفون: |
Irisawa, T., Tokumitsu, S., Hattori, T., Nakagawa, K., Koh, S., Shiraki, Y. |
| المصدر: |
Applied Physics Letters; 7/29/2002, Vol. 81 Issue 5, p847, 3p, 1 Diagram, 3 Graphs |
| مصطلحات موضوعية: |
HIGH temperatures, HETEROSTRUCTURES, SILICON compounds, METAL oxide semiconductor field-effect transistors |
| مستخلص: |
We have obtained ultrahigh room-temperature (RT) hole Hall and effective mobility in Si[sub 0.3]Ge[sub 0.7]/Ge/Si[sub 0.3]Ge[sub 0.7] heterostructures with very small parallel conduction. Reducing parallel conduction was achieved by employing Sb doping in Si[sub 0.3]Ge[sub 0.7] buffer layers, which drastically increased RT hole Hall mobility up to 2100 cm²/V s in the strained Ge channel modulation-doped structures and improved device characteristics of the p-type metal-oxide-semiconductor field-effect transistors with the strained Ge channel. The peak effective mobility reached to 2700 cm²/V s at RT, which was much higher than the bulk Ge drift mobility. [ABSTRACT FROM AUTHOR] |
|
Copyright of Applied Physics Letters is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
