التفاصيل البيبلوغرافية
| العنوان: |
Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals. |
| المؤلفون: |
Suwa, T., Teramoto, A., Kumagai, Y., Abe, K., Li, X., Nakao, Y., Yamamoto, M., Kato, Y., Muro, T., Kinoshita, T., Ohmi, T., Hattori, T. |
| المصدر: |
Applied Physics Letters; 4/26/2010, Vol. 96 Issue 17, p173103, 3p, 1 Chart, 4 Graphs |
| مصطلحات موضوعية: |
ELECTRONIC structure, VALENCE (Chemistry), VALENCE fluctuations, SILICON oxide films, REACTIVE oxygen species |
| مستخلص: |
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by measuring angle-resolved photoelectron spectra arising from Si 2p and O 1s core levels and a valence band with the same probing depth. We clarified that (1) the SiO2/Si interfaces formed exhibited an almost abrupt compositional transition, (2) the valence band offsets at the Si(111)/Si, Si(110)/Si, and Si(551)/Si interfaces are almost the same and are 0.07 eV smaller than that at the SiO2/Si(100) interface. [ABSTRACT FROM AUTHOR] |
|
Copyright of Applied Physics Letters is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
