التفاصيل البيبلوغرافية
| العنوان: |
Strain relaxation in high Ge content SiGe layers deposited on Si. |
| المؤلفون: |
Capellini, G., De Seta, M., Busby, Y., Pea, M., Evangelisti, F., Nicotra, G., Spinella, C., Nardone, M., Ferrari, C. |
| المصدر: |
Journal of Applied Physics; Mar2010, Vol. 107 Issue 6, p063504-063505-8, 8p, 5 Diagrams, 1 Graph |
| مصطلحات موضوعية: |
STRAINS & stresses (Mechanics), RAMAN spectroscopy, RAMAN effect, TRANSMISSION electron microscopy, SEMICONDUCTORS, MICROELECTRONICS |
| مستخلص: |
We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si0.22Ge0.78 heteroepitaxial layer deposited on Si substrates in tensile, neutral, and compressive strain conditions. The three regimes have been obtained by interposing between the SiGe layer and the substrate a fully relaxed Ge layer, a partially relaxed Ge layer, or growing directly the alloy on Si. We found that the deposition of a Ge buffer layer prior to the growth of the SiGe is very promising in view of the realization of thin virtual substrates on silicon to be used for the deposition of strain-controlled high Ge content SiGe alloys. We demonstrate that this is mainly due to the strain relaxation mechanism in the Ge layer occurring via insertion of pure edge 90° misfit dislocations (MDs) and to the confinement of threading arms in to the Ge layer due to a second MD network formed at the SiGe/Ge heterointerface. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
