التفاصيل البيبلوغرافية
| العنوان: |
An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots by selective area growth. |
| المؤلفون: |
Nguyen, D. H., Park, J., Jang, Y. D., Lee, D., Pyun, S. H., Jeong, W. G., Jang, J. W. |
| المصدر: |
Journal of Applied Physics; Feb2010, Vol. 107 Issue 4, p043522-1-043522-4, 4p, 4 Graphs |
| مصطلحات موضوعية: |
QUANTUM dots, PHOTOLUMINESCENCE, INDIUM arsenide, DIELECTRIC devices, ENERGY levels (Quantum mechanics), QUANTUM theory, PHYSICS research |
| مستخلص: |
Selective area growth was adopted to grow high-quality quantum dots (QDs) of different energy levels on the same plane at 1.5 μm. At room temperature, the photoluminescence (PL) peak of InAs/InGaAsP QDs on InP substrate was shifted from 1445 to 1570 nm for sample 1 (from 1385 to 1485 nm for sample 2) in a plane, with a PL intensity comparable to those of regular samples grown without dielectric patterns. The dot shape was a round dome, with the density reduced by 28% and the height increased by 17%. Time-resolved PL indicated that the selectively grown QDs behaved similarly to regular QDs. These results open up a practical method for in-plane integration of QD devices. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
