التفاصيل البيبلوغرافية
| العنوان: |
Embracing disorder in quantum materials design. |
| المؤلفون: |
Mazza, A. R., Yan, J.-Q., Middey, S., Gardner, J. S., Chen, A.-H., Brahlek, M., Ward, T. Z. |
| المصدر: |
Applied Physics Letters; 6/3/2024, Vol. 124 Issue 23, p1-10, 10p |
| مصطلحات موضوعية: |
CONDENSED matter physics, METAL-insulator transitions, CRYSTAL lattices, DEGREES of freedom, ATOMIC interactions, MAGNETIC entropy, QUANTUM spin Hall effect, SINGLE crystals |
| مستخلص: |
Many of the most exciting materials discoveries in fundamental condensed matter physics are made in systems hosting some degree of intrinsic disorder. While disorder has historically been regarded as something to be avoided in materials design, it is often of central importance to correlated and quantum materials. This is largely driven by the conceptual and theoretical ease to handle, predict, and understand highly uniform systems that exhibit complex interactions, symmetries, and band structures. In this Perspective, we highlight how flipping this paradigm has enabled exciting possibilities in the emerging field of high entropy materials, focusing primarily on high entropy oxide and chalcogenide quantum materials. These materials host high levels of cation or anion compositional disorder while maintaining unexpectedly uniform single crystal lattices. The diversity of atomic scale interactions of spin, charge, orbital, and lattice degrees of freedom are found to emerge into coherent properties on much larger length scales. Thus, altering the variance and magnitudes of the atomic scale properties through elemental selection can open new routes to tune global correlated phases, such as magnetism, metal–insulator transitions, ferroelectricity, and even emergent topological responses. The strategy of embracing disorder in this way provides a much broader pallet from which functional states can be designed for next-generation microelectronic and quantum information systems. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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