التفاصيل البيبلوغرافية
| العنوان: |
Fast low bias pulsed DC transport measurements for the investigation of low temperature transport effects in semiconductor devices. |
| المؤلفون: |
Fuchs, C., Hofer, M., Fürst, L., Shamim, S., Kießling, T., Buhmann, H., Molenkamp, L. W. |
| المصدر: |
Journal of Applied Physics; 11/7/2023, Vol. 134 Issue 17, p1-10, 10p |
| مصطلحات موضوعية: |
SEMICONDUCTOR devices, TEMPERATURE effect, LOW temperatures, OHMIC resistance, QUANTUM wells, QUANTUM transitions |
| مستخلص: |
We present a setup for fast, low-bias (≤ 1 mV) DC transport measurements with μs time resolution for high ohmic resistance (≈ 20 k Ω) semiconducting samples. We discuss the circuitry and instrumentation for the measurement approach that can be applied to any kind of semiconductor device or (gated) two-dimensional material and demonstrate the main measurement artifacts in typical measurements by means of circuit simulation. Based on the latter, we present a simple two-step protocol for eliminating the measurement artifacts reliably. We demonstrate the technique by measuring the transitions between quantum Hall plateaus in the HgTe quantum wells and resolve plateaus as short-lived as 100 μs. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
