التفاصيل البيبلوغرافية
| العنوان: |
Theoretical investigation of Rayleigh surface acoustic wave propagation characteristics in c-axis-zigzag ScAlN film/silicon substrate structure. |
| المؤلفون: |
Tominaga, Takumi, Takayanagi, Shinji, Yanagitani, Takahiko |
| المصدر: |
Journal of Applied Physics; 5/28/2023, Vol. 133 Issue 20, p1-10, 10p |
| مصطلحات موضوعية: |
ACOUSTIC surface waves, RAYLEIGH waves, MOBILE communication systems, ACOUSTIC wave propagation, SILICON, SILICON films, MANUFACTURING processes |
| مستخلص: |
Surface acoustic wave (SAW) resonators are key components of mobile communication systems, and the development of wideband SAW resonators is especially required because next-generation mobile communication systems require high-speed data transmission using wide frequency bands. In this study, two layered structures—(i) a c-axis-tilted ScAlN bilayer film/silicon substrate and (ii) a c-axis-zigzag ScAlN film/silicon substrate—are proposed for highly coupled SAW resonators, and the electromechanical coupling coefficient K2 of the non-leaky Rayleigh-mode SAW propagating in these structures is investigated theoretically. With a proper c-axis tilt angle and thickness selection of the ScAlN film, the first-mode Rayleigh SAW in the c-axis-tilted ScAlN bilayer film/silicon substrate and c-axis-zigzag ScAlN film/silicon substrate offers high K2. The maximum K2 was 9.56%, obtained in the c-axis-zigzag ScAlN film/silicon substrate structure, which was 2.5 times the maximum K2 in the c-axis-tilted ScAlN monolayer film/silicon substrate structure; this is because the c-axis-zigzag ScAlN films increase the shear vertical component of the SAW particle displacement, most of which is concentrated in the c-axis-zigzag ScAlN film on the silicon substrate. It is also important that the second-mode SAW (Sezawa wave) in the c-axis-zigzag ScAlN film/silicon substrate structure is not excited when the K2 value of the first-mode SAW is maximized. The techniques for fabricating a c-axis-tilted ScAlN film and a c-axis-zigzag ScAlN film have been reported, and well-established micromachining technology related to silicon semiconductors offers significant advantages in the manufacturing and processing of SAW resonators. Therefore, the c-axis-zigzag ScAlN film/silicon substrate structure has significant potential for SAW device applications. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |
