التفاصيل البيبلوغرافية
| العنوان: |
Optical transitions of gallium vacancies in neutron irradiated β-Ga2O3. |
| المؤلفون: |
Bhandari, Suman, Nardone, Claudia, Zvanut, M. E. |
| المصدر: |
Journal of Applied Physics; 7/14/2022, Vol. 132 Issue 2, p1-6, 6p |
| مصطلحات موضوعية: |
NEUTRON irradiation, GALLIUM, ELECTRON paramagnetic resonance, NEUTRONS, ELECTRONIC excitation, CONDUCTION electrons |
| مستخلص: |
Investigation of intrinsic defects such as gallium vacancies (VGa) and their interactions with extrinsic defects like Fe in β-Ga2O3 is crucial for the development of devices. Photoinduced electron paramagnetic resonance (photo-EPR) experiments are performed at room temperature and 30 K by illuminating neutron irradiated Fe-doped and unintentionally doped β-Ga2O3 crystals with LEDs from 0.7 to 4.7 eV, and interactions between VGa and other defects such as Fe are investigated. 30 K measurements indicate small photoinduced changes in the amount of V Ga 2 − , but the photothreshold suggests little or no interaction with Fe. Rather, the decrease of V Ga 2 − is accompanied by the emergence of self-trapped holes (STHs), indicating that the stability of the STH is critical to the V Ga 2 − optical transition. We suggest the decrease of V Ga 2 − is due to excitation of electrons from valence band maximum to the defect. The resulting hole is captured at an oxygen atom to form STH. By performing a systematic photo-EPR study of gallium vacancies, we show that the intrinsic defect, VGa, does not interact with extrinsic defects, Fe or Ir. Instead, VGa contributes to the stability of the STH. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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