التفاصيل البيبلوغرافية
| العنوان: |
X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300 °C. |
| المؤلفون: |
Shioji, M., Shiraishi, T., Takahashi, K., Nohira, H., Azuma, K., Nakata, T., Takata, Y., Shin, S., Kobayashi, K., Hattori, T. |
| المصدر: |
Applied Physics Letters; 5/10/2004, Vol. 84 Issue 19, p3756-3758, 3p, 1 Chart, 3 Graphs |
| مصطلحات موضوعية: |
THIN film transistors, THIN films, PHOTOELECTRONS, SILICON oxide, INTERFACES (Physical sciences), SEMICONDUCTORS |
| مستخلص: |
Using the high-brilliant synchrotron radiation at SPring-8 we have studied the SiO2/Si interface structures, the interface state densities, and the uniformities of ∼1-nm-thick oxide films formed by three kinds of atomic oxygen at 300 °C by measuring Si 2p photoelectron spectra at the photon energy of 1050 eV and the energy loss spectra of O 1s photoelectrons at the photon energy of 714 eV. Among silicon oxide films studied here the abrupt compositional transition at SiO2/Si interface, the smallest deviation in interface state density, the interface state density comparable to that for thermal oxide formed in dry oxygen at 950 °C, and the highest uniformity was obtained with oxide film formed in krypton-mixed oxygen (Kr:O2=97:3) plasma. [ABSTRACT FROM AUTHOR] |
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