التفاصيل البيبلوغرافية
| العنوان: |
Emission from the higher-order excitons in ZnO films grown by laser molecular-beam epitaxy. |
| المؤلفون: |
Tsukazaki, A., Ohtomo, A., Kawasaki, M., Makino, T., Chia, C.H., Segawa, Y., Koinuma, H. |
| المصدر: |
Applied Physics Letters; 5/10/2004, Vol. 84 Issue 19, p3858-3860, 3p, 4 Graphs |
| مصطلحات موضوعية: |
MOLECULAR beam epitaxy, THIN films, ZINC oxide thin films, LASERS, PHOTOLUMINESCENCE, OPTOELECTRONICS |
| مستخلص: |
Epitaxial ZnO thin films were grown by laser molecular-beam epitaxy on lattice-matched ScAlMgO4 substrates following the deposition and annealing of suitable buffer layers. The samples were characterized by low-temperature photoluminescence (PL), absorption, and reflectivity measurements. PL from higher order (n=2) excitons (A exciton) was observed at temperatures lower than 40 K. The absorption spectrum contained lines and the reflection spectrum exhibited anomalies that were assigned to the excited-states (n = 2,3) of A and B excitons. The optical quality could be improved dramatically by using annealed ZnO or MgZnO buffer layers. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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