التفاصيل البيبلوغرافية
| العنوان: |
Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy |
| المؤلفون: |
Lin, Chia-Hung mfamizuki@hotmail.com, Abe, Ryota1, Uchiyama, Shota1, Maruyama, Takahiro1, Naritsuka, Shigeya1 |
| المصدر: |
Journal of Crystal Growth. Aug2012, Vol. 352 Issue 1, p214-217. 4p. |
| مصطلحات موضوعية: |
*GALLIUM nitride, *MOLECULAR beam epitaxy, *TEMPERATURE effect, *CHEMICAL decomposition, *AMMONIA, *MATHEMATICAL optimization, *DIFFUSION |
| مستخلص: |
Abstract: Growth optimization toward low angle incidence microchannel epitaxy (LAIMCE) of GaN was accomplished using ammonia-based metal-organic molecular beam epitaxy (NH3-based MOMBE). Firstly, the [NH3]/[trimethylgallium (TMG)] ratio (R) dependence of selective GaN growth was studied. The growth temperature was set at 860°C while R was varied from 5 to 200 with precursors being supplied parallel to the openings cut in the SiO2 mask. The selectivity of the growth was superior for all R, because TMG and NH3 preferably decompose on the GaN film. The formation of {112̄0}GaN or {112̄2}GaN sidewalls and (0001)GaN surface were observed by the change in R. The intersurface diffusion of Ga adatoms was also changed by a change in R. Ga adatoms migrate from the sidewalls to the top at R lower than 50, whereas the migration weakened with R greater than 100. Secondly, LAIMCE was optimized by changing the growth temperature. Consequently, 6μm wide lateral overgrowth in the direction of precursor incidence was achieved with no pit after etching by H3PO4, which was six times wider than that in the opposite direction. [Copyright &y& Elsevier] |
| قاعدة البيانات: |
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