دورية أكاديمية

IBAD–MgO buffer layers for coated conductors in the large-scale system

التفاصيل البيبلوغرافية
العنوان: IBAD–MgO buffer layers for coated conductors in the large-scale system
المؤلفون: Hanyu, S. s_hanyu@fujikura.co.jp, Tashita, C.1, Hanada, Y.1, Hayashida, T.1, Kutami, H.1, Igarashi, M.1, Fuji, H.1, Kakimoto, K.1, Iijima, Y.1, Saitoh, T.1
المصدر: Physica C. Oct2009, Vol. 469 Issue 15-20, p1364-1366. 3p.
مصطلحات موضوعية: *HIGH temperature superconductors, *PULSED laser deposition, *INDUSTRIAL use of ion bombardment, *MAGNESIUM compounds, *ELECTRICAL conductors, *SURFACE coatings, *MICROFABRICATION, *CRITICAL currents
مستخلص: Abstract: For practical applications of high-temperature superconductor tape, the high production rate of tapes is needed to reduce its cost. Recently, the long-length coated conductor with high performance has been fabricated by an ion beam assisted deposition/pulsed laser deposition (IBAD/PLD) method in Fujikura. In IBAD process, we adopted IBAD–Gd2Zr2O7 (GZO) film. The process speed of IBAD–GZO film was increased up to 5m/h using a polished metal substrate tape. To fabricate biaxially-textured buffer layers at a higher rate, we have started to develop another structures such as (a) IBAD–GZO/IBAD–MgO (3-fold symmetry) and (b) IBAD–MgO (4-fold symmetry). In the case (a), we fabricated GdBCO/CeO2/IBAD–GZO/IBAD–MgO tape and the critical current was Ic =550A/cm (2.46MA/cm2) and throughput of IBAD processes were 20m/h. In the case (b), IBAD–MgO short samples with ΔΦ of 9°–11° were obtained at 500m/h. The 500m/h (10mm width) is extremely high rate in IBAD process in the world. As long-length IBAD layer 10m, 50m and 100m IBAD–MgO films were fabricated at the speed of 100m/h. After CeO2 deposition, in-plane textures of these samples were ΔΦ of 3.7°–3.7°, 4.1°–4.9° and 4.2°–4.8°. Using some of these buffer layers, we have obtained GdBCO film with Ic =400A/cm (2MA/cm2, 10m) and Ic =550A/cm (2.7MA/cm2, short sample). [Copyright &y& Elsevier]
قاعدة البيانات: Academic Search Index
الوصف
تدمد:09214534
DOI:10.1016/j.physc.2009.05.075