التفاصيل البيبلوغرافية
| العنوان: |
Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrate |
| المؤلفون: |
Naritsuka, Shigeya1,2 narit@ccmfs.meijo-u.ac.jp, Matsuoka, Sota1, Kondo, Toshiyuki1, Saitoh, Koji1, Suzuki, Takashi1, Yamamoto, Yo2, Maruyama, Takahiro1,2 |
| المصدر: |
Journal of Crystal Growth. Apr2007, Vol. 301-302, p42-46. 5p. |
| مصطلحات موضوعية: |
*GALLIUM arsenide, *EPITAXY, *SCANNING electron microscopes, *SURFACES (Technology) |
| مستخلص: |
Abstract: The formation mechanism of rotational twins was systematically studied in beam-induced lateral epitaxy (BILE) on (111)B GaAs substrates using in situ scanning electron microscope (SEM) and ex situ atomic force microscope (AFM). As a result, it was found that rotational twins were produced from two-dimensional nuclei on the surface with 2×2 reconstruction by introducing stacking faults beneath them. As-trimers on 2×2 reconstruction probably induced the change. This was confirmed by the result that the formation of rotational twins was suppressed by the use of substrates with offset angles and a high growth temperature. The former is characterized by the high density of surface steps, which inhibits two-dimensional nucleation by the narrow inter-step distance. The latter brings reconstruction, which includes no As-trimer, and leads to the normal stacking of growth with a smooth surface even with two-dimensional nucleation. [Copyright &y& Elsevier] |
| قاعدة البيانات: |
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