دورية أكاديمية

[(Ph3P)2Ag(μ-SeCH2Ph)2In(SeCH2Ph)2]: a new heterobimetallic single source precursor as a springboard to bulk, nano and thin film ternary AgInSe2 materials.

التفاصيل البيبلوغرافية
العنوان: [(Ph3P)2Ag(μ-SeCH2Ph)2In(SeCH2Ph)2]: a new heterobimetallic single source precursor as a springboard to bulk, nano and thin film ternary AgInSe2 materials.
المؤلفون: Karmakar, Gourab1 (AUTHOR) gourabk@barc.gov.in, Tyagi, Adish1 (AUTHOR), Tyagi, Deepak1 (AUTHOR), Shah, Alpa Y.1 (AUTHOR), Wadawale, A. P.1 (AUTHOR), Donthula, Harish2 (AUTHOR), Singh, Vishal2 (AUTHOR)
المصدر: New Journal of Chemistry. 7/14/2024, Vol. 48 Issue 26, p11910-11917. 8p.
مصطلحات موضوعية: *THIN films, *ENERGY dispersive X-ray spectroscopy, *HETEROBIMETALLIC complexes, *BAND gaps, *X-ray powder diffraction, *PHOTOCATHODES
مستخلص: Silver indium selenide (AgInSe2) has been proposed as an efficient absorber material for sustainable solar cells. Phase pure preparation of this exotic material in the nano regime is highly desirable. This report describes the design and synthesis of a new heterobimetallic complex [(Ph3P)2Ag(μ-SeCH2Ph)2In(SeCH2Ph)2] along with its structural characterization. This complex acts as an air enduring, normal temperature and pressure (NTP) stable versatile single source precursor for synthesizing bulk, nanocrystalline and thin film of AgInSe2. The crystal structure, phase purity, morphology, elemental composition and band gap of the synthesized materials were determined from powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and diffuse reflectance spectroscopy (DRS-UV), respectively. The band gap of the nanocrystalline AgInSe2 lies in the range suitable for solar cell applications. A prototype photoelectrochemical cell fabricated with the pristine AgInSe2 nanoparticles exhibits high photoresponsivity, which makes them a suitable candidate for clean energy applications. [ABSTRACT FROM AUTHOR]
قاعدة البيانات: Academic Search Index
الوصف
تدمد:11440546
DOI:10.1039/d4nj01430h