التفاصيل البيبلوغرافية
| العنوان: |
Multinuclear layer-by-layer growth on Ge(111) by LPE |
| المؤلفون: |
Maruyama, Takahiro1,2 takamaru@ccmfs.meijo-u.ac.jp, Matsuda, Keiji1, Naritsuka, Shigeya1,2 |
| المصدر: |
Journal of Crystal Growth. Feb2005, Vol. 275 Issue 1/2, pe2155-e2160. 0p. |
| مصطلحات موضوعية: |
*CRYSTAL growth, *CRYSTALLIZATION, *ATOMIC force microscopy, *COLD (Temperature) |
| مستخلص: |
Abstract: Aiming at the fabrication of step-free Ge(111) surfaces of device size, liquid-phase epitaxy (LPE) growth was carried out on Ge(111) mesa structures. Reducing supersaturation by controlling the growth temperature, nearly atomically flat faces were formed on several mesas following LPE growth at less than 480°C. Taking into account the density of edge, screw and mixed dislocations, these flat faces appear to have formed on the top surface of screw and mixed dislocation-free mesas. Observation by atomic force microscopy (AFM) showed the presence of a number of triangular hollows with monolayer step depth on the flat faces, indicating “multinuclear layer-by-layer growth”. In addition, the number of triangular hollows was found to be exponentially dependent on the reciprocal of growth temperature. Taking into account the step velocity, the mechanism of two-dimensional nucleation on an atomically flat surface is discussed. [Copyright &y& Elsevier] |
| قاعدة البيانات: |
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