التفاصيل البيبلوغرافية
| العنوان: |
Comparison of V-I characteristics between MOSFET and CNTFET by varying the carbon nanotube length. |
| المؤلفون: |
Shankar, Avva1 (AUTHOR), Yakkala, Bhaskarrao1 (AUTHOR) bhaskarrao@saveetha.com |
| المصدر: |
AIP Conference Proceedings. 2023, Vol. 2587 Issue 1, p1-8. 8p. |
| مصطلحات موضوعية: |
*CARBON nanotube field effect transistors, *METAL oxide semiconductor field-effect transistors, *CARBON nanotubes |
| مستخلص: |
The project aims to improve the drain characteristics of a novel CNTFET (carbon nanotube field effect transistor) by varying the carbon nanotube length. The CNTFET and MOSFET was chosen as a group having 20 samples each respectively. The drain characteristics were simulated by varying the carbon nanotube length of a CNTFET and channel length of a MOSFET by using the DFT tool. Reducing the channel length in an innovative method will lead to reducing the size of the device. The Independent T test was done which reveals that the CNTFET (P=0.152) was found to be statistically insignificant compared with MOSFET. The analysis we found that CNTFET(mean - 0.00007692) has better drain characteristics compared to MOSFET (mean -0.00002249). [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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