دورية أكاديمية

Self-powered high-performance ultraviolet C photodetector based on poly(9-vinyl carbazole)/SnO2 quantum dot heterojunction.

التفاصيل البيبلوغرافية
العنوان: Self-powered high-performance ultraviolet C photodetector based on poly(9-vinyl carbazole)/SnO2 quantum dot heterojunction.
المؤلفون: Park, Eunhee1 (AUTHOR), Park, Taehyun1 (AUTHOR), Yoo, Hocheon1,2 (AUTHOR) hyoo@gachon.ac.kr, Hur, Jaehyun1 (AUTHOR) jhhur@gachon.ac.kr
المصدر: Journal of Alloys & Compounds. Oct2022, Vol. 918, pN.PAG-N.PAG. 1p.
مصطلحات موضوعية: *QUANTUM dots, *PHOTODETECTORS, *CARBAZOLE, *HETEROJUNCTIONS, *ENVIRONMENTAL monitoring
مستخلص: Ultraviolet C (UVC) photodetectors have attracted significant attention recently owing to the importance of UVC detection for preventing human skin damage, monitoring environmental conditions, detecting power facility aging, and military applications. The "solar-blindness" of UVC detectors ensures low noise levels, benefiting from lower interference than other environmental signals. In this study, a solution-processed PN heterojunction consisting of P-type polymer (poly(9-vinyl carbazole) (PVK)) and N-type metal oxide quantum dots (SnO 2 QDs) was used to develop a self-powered high-performance UVC photodetector. Reducing the size of the SnO 2 QDs significantly enhanced the selective absorption of the UVC wavelength range via quantum confinement. The device architecture and constituent film thickness were carefully controlled to enhance the performance of the PVK/SnO 2 QD UVC photodetector. Under the optimized conditions, the device exhibited remarkable responsivity (49.6 mA W−1 at 254 nm and 166 mA W−1 at 220 nm), detectivity (2.16 × 1010 Jones at 254 nm), UVC/ultraviolet A (UVA) rejection ratio (R 254 nm /R 365 nm and R 220 nm /R 365 nm of ~260 and 880, respectively), and stability over long-term self-powered on/off operations. Our solar-blind UVC photodetector can be used to inexpensively, simply, and precisely monitor hazardous UVC light in various applications. [Display omitted] • Solution processed PVK/SnO2 QD photodetector was fabricated for UVC detection. • Effect of device structure (PN vs NP) on the UVC sensing performance was studied. • PVK and SnO2 QD layer thicknesses were optimized to enhance sensing performance. • PVK/SnO2 QD displayed superb photoresponse, detectivity, and stability. [ABSTRACT FROM AUTHOR]
قاعدة البيانات: Academic Search Index
الوصف
تدمد:09258388
DOI:10.1016/j.jallcom.2022.165502