التفاصيل البيبلوغرافية
| العنوان: |
Precipitation of multilayer graphene directly on gallium nitride template using Tungsten capping layer. |
| المؤلفون: |
Yamada, Jumpei1 (AUTHOR) jjjjjjyyyyyy119@gmail.com, Ueda, Yuki1 (AUTHOR), Maruyama, Takahiro2 (AUTHOR), Naritsuka, Shigeya1 (AUTHOR) narit@meijo-u.ac.jp |
| المصدر: |
Journal of Crystal Growth. Mar2020, Vol. 534, pN.PAG-N.PAG. 1p. |
| مصطلحات موضوعية: |
*GRAPHENE, *TUNGSTEN, *GALLIUM nitride, *PRECIPITATION (Chemistry), *SURFACE roughness |
| مستخلص: |
• Direct precipitation of graphene was studied on GaN to clarify its mechanism. • W capping layer successfully suppresses the formation of graphene on the surface. • Graphene directly precipitates at the interface between catalyst and GaN template. • 700 °C was the optimal annealing temperature for the graphene precipitation on GaN. The direct growth of graphene was investigated with precipitating graphene on a GaN template at various temperatures. In the method, a carbon source and catalyst were firstly deposited, and the sample was annealed to precipitate graphene. Tungsten capping layer was deposited on the surface to suppress the graphene precipitating to the sample surface. Consequently, the graphene was precipitated at the interface between the catalyst and the GaN template. After the removal of the catalyst, the graphene was successfully obtained on the GaN template. The Raman D/G ratio of the graphene decreased with increasing the annealing temperature. At 700 °C, fine graphene was obtained on the GaN template while maintaining the flatness and smoothness of the GaN surface. XRD and XPS measurements were also performed to investigate the precipitation of the graphene in detail. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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