التفاصيل البيبلوغرافية
| العنوان: |
Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile. |
| المؤلفون: |
Gotow, Takahiro1 (AUTHOR) gotow@mosfet.t.u-tokyo.ac.jp, Mitsuhara, Manabu2 (AUTHOR), Hoshi, Takuya2 (AUTHOR), Sugiyama, Hiroki2 (AUTHOR), Takenaka, Mitsuru1 (AUTHOR), Takagi, Shinichi1 (AUTHOR) |
| المصدر: |
Journal of Applied Physics. 12/7/2019, Vol. 126 Issue 21, p1-6. 6p. 1 Diagram, 6 Graphs. |
| مصطلحات موضوعية: |
*TUNNEL field-effect transistors, *ANTIMONY, *MASS spectrometry, *DEUTERIUM |
| مستخلص: |
The effects of source impurity concentrations and profiles on the electrical characteristics of Be- and C-doped p+-GaAs0.51Sb0.49/In0.53Ga0.47As vertical tunneling field-effect transistors (TFETs) are experimentally studied. The ON current (ION) and subthreshold swing (SS) of the GaAsSb/InGaAs TFETs, measured at 50 K to suppress the generation-recombination leakage current, are found to be improved by using C instead of Be as the source impurity. A minimum SS of ∼20 mV/dec at VD = 50 mV and an ION of 1.7 × 10–6 A/μm at VD = 500 mV and VG = 1.5 V are obtained at 50 K for C-doped p+-GaAsSb/InGaAs TFETs with the source acceptor concentrations of 4 × 1019 and 7 × 1019 cm−3. The temperature dependence of the ID–VG characteristics suggests almost no difference in the crystal quality of the GaAsSb/InGaAs heterointerfaces between the source impurity species of Be and C. On the other hand, the results of secondary ion mass spectroscopy analyses show that the C profiles near the source-channel interfaces are steeper than the Be ones. Thus, the improved ION and SS of TFETs with the C-doped source region are mainly attributed to the improved abruptness of the p-type dopant profiles near the source-channel interfaces. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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