التفاصيل البيبلوغرافية
| العنوان: |
Theoretical prediction and experimental demonstration of inter-valley scattering induced Inverse Spin Hall effect for hot electrons in GaAs. |
| المؤلفون: |
Mudi, Priyabrata1,2 mudi@rrcat.gov.in, Khamari, Shailesh K.1 shaileshk@rrcat.gov.in, Sharma, T. K.1,2 tarun@rrcat.gov.in |
| المصدر: |
Journal of Applied Physics. 8/14/2019, Vol. 126 Issue 6, pN.PAG-N.PAG. 9p. 2 Charts, 6 Graphs. |
| مصطلحات موضوعية: |
*SPIN Hall effect, *HOT carriers, *AUDITING standards, *CONDUCTION bands |
| مستخلص: |
Realization of the Inverse Spin Hall Effect (ISHE) with hot electrons in direct bandgap semiconductors is an intriguing puzzle. Here, we report the influence of steady state carrier accumulation in the satellite L valley on the establishment of ISHE in the GaAs epilayer. Steady state carrier accumulation is calculated by analytically solving the rate equations where the whole conduction band is divided into four distinct regions based on the energy and momentum. Electron-hole generation, energy and spin relaxation, and various recombination mechanisms are considered in the theoretical framework where carrier accumulation in the L valley of GaAs is driven by intervalley scattering. This is then followed by a set of experiments to measure the photoinduced ISHE at excitation energy (Eex) of 1.65, 1.94, and 2.33 eV, where significant differences are theoretically predicted. The measured values of ISHE signal are thereafter compared with the numerically calculated ones, which establish the validity of the proposed formalism. Further, the physical origin of ISHE signal is investigated for different regimes that lead to the observation of intervalley scattering induced ISHE at Eex = 2.33 eV. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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