Interplay of carriers and deep-level recombination centers of 275-nm light-emitting diodes — Analysis on the parasitic peaks over wide ranges of temperature and injection density
العنوان: | Interplay of carriers and deep-level recombination centers of 275-nm light-emitting diodes — Analysis on the parasitic peaks over wide ranges of temperature and injection density |
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المؤلفون: | Hao-Chung Kuo, Huashan Chen, Sung Wen Huang Chen, Zhong Chen, Tingzhu Wu, Chih Hao Lin, Yue Lin, Liu Meng, Zhangbao Peng, Zhibin Shangguan |
المصدر: | Optics Express. 27:A1060 |
بيانات النشر: | The Optical Society, 2019. |
سنة النشر: | 2019 |
مصطلحات موضوعية: | Materials science, business.industry, 02 engineering and technology, Electron, Atmospheric temperature range, 021001 nanoscience & nanotechnology, medicine.disease_cause, 01 natural sciences, Luminance, Atomic and Molecular Physics, and Optics, law.invention, 010309 optics, Optics, law, Excited state, 0103 physical sciences, Radiative transfer, medicine, Optoelectronics, 0210 nano-technology, business, Ultraviolet, Diode, Light-emitting diode |
الوصف: | The low luminance efficiency, poor reliability and parasitic peaks have greatly limited the commercialization of deep ultraviolet (DUV) light-emitting diodes. Tasks of identifying the culprits of these deficits are of paramount importance but remains unaccomplished. We employ the full-range temperature (20 K -300 K) measurement on 275-nm DUV devices that subjected to a 15-hour current-stress aging. The results suggest that the primary culprit of fast luminous decay is the proliferation of non-radiative centers. The origins of two main parasitic peaks are identified. The 310-nm peak is considered to solely come from deep-level radiative centers (DLRCs) that only dwell in the active region. Whereas, the 400-nm peak is proven to be dual-sources. One is related to the DLRCs in the active region, which only can be observed at very low currents; the other emerging at higher currents are associated with similar kinds of DLRCs located in the p-region, which only are excited when electrons overflow. This new discovery also demonstrates that a thorough investigation on the interplay among carriers and various types of defects should be conducted on the basis of the measurement that is taken under a wide temperature range, as well as under a proper forward voltage. This is to let the quasi-Fermi level shift across deep defect levels, the band-edge, and to over-band, whereby these recombination sites are exposed to deficit, moderate and saturated electron environment so that their natures can be well tested. |
تدمد: | 1094-4087 |
الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10a792ffcf02375938c8ac57965435caTest https://doi.org/10.1364/oe.27.0a1060Test |
حقوق: | OPEN |
رقم الانضمام: | edsair.doi.dedup.....10a792ffcf02375938c8ac57965435ca |
قاعدة البيانات: | OpenAIRE |