A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer
العنوان: | A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer |
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المؤلفون: | Cheng-Li Lin, Mu-Chun Wang, Haoshuang Gu, Bin Zhou, Deshi Li, Xuecheng Zou, Wen-Shiang Liao, Yue-Gie Liaw |
المصدر: | Solid-State Electronics. 126:46-50 |
بيانات النشر: | Elsevier BV, 2016. |
سنة النشر: | 2016 |
مصطلحات موضوعية: | 010302 applied physics, Materials science, Silicon, business.industry, Transistor, Electrical engineering, Silicon on insulator, chemistry.chemical_element, Condensed Matter Physics, 01 natural sciences, Aspect ratio (image), 010305 fluids & plasmas, Electronic, Optical and Magnetic Materials, Threshold voltage, law.invention, CMOS, chemistry, law, Gate oxide, 0103 physical sciences, Materials Chemistry, Optoelectronics, Wafer, Electrical and Electronic Engineering, business |
الوصف: | Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio (Height/Width = 82.9 nm/8.6 nm) have been developed after integrating a 14 A nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. The drive current (ION), off current (IOFF), subthreshold swing (SS), drain-induced barrier lowering (DIBL) and transistor gate delay of 30 nm gate length (Lg) of FinFETs illustrate the promising device performance. The TCAD simulations demonstrate that both threshold voltage (Vth) and off current can be adjusted appropriately through the full silicidation (FUSI) of CoSi2 gate engineering. Moreover, the drive currents of n- and p-channel FinFETs are able to be further enhanced once applying the raised Source/Drain (S/D) approach technology for reducing the S/D resistance drastically. |
تدمد: | 0038-1101 |
الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::edf7aa154495e678aba562e452530fbfTest https://doi.org/10.1016/j.sse.2016.09.017Test |
حقوق: | CLOSED |
رقم الانضمام: | edsair.doi...........edf7aa154495e678aba562e452530fbf |
قاعدة البيانات: | OpenAIRE |
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